capable of 2.5v gate drive bv dss 20v small package outline r ds(on) 85m surface mount package i d 3.2a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w total power dissipation 1.38 -55 to 150 thermal data parameter operating junction temperature range -55 to 150 linear derating factor 0.01 storage temperature range continuous drain current 3 , v gs @ 4.5v 2.6 pulsed drain current 1 10 gate-source voltage + 12 continuous drain current 3 , v gs @ 4.5v 3.2 parameter rating drain-source voltage 20 AP2302GN-HF g d s d g s sot-23 advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
2 of 2 electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.1 - v/ r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =3.6a - - 85 m ? v gs =2.5v, i d =3.1a - - 115 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =5v, i d =3.6a - 6 - s i dss drain-source leakage current v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =20v ,v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =3.6a - 4.4 - nc q gs gate-source charge v ds =10v - 0.6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 1.9 - nc t d(on) turn-on delay time 2 v ds =10v - 5.2 - ns t r rise time i d =3.6a - 37 - ns t d(off) turn-off delay time r g =6 , v gs =5v - 15 - ns t f fall time r d =2.8 - 5.7 - ns c iss input capacitance v gs =0v - 145 - pf c oss output capacitance v ds =10v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 50 - pf r g gate resistance f=1.0mhz - 5.3 8 ? source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.2v - - 1 a i sm pulsed source current ( body diode ) 1 --10 a v sd forward on voltage 2 i s =1.6a, v gs =0v - - 1.2 v sales@twtysemi.com http://www.twtysemi.com 4008-318-123 AP2302GN-HF product specification
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